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M30L40C
www.vishay.com
Vishay General Semiconductor
Revision: 20-Nov-12
1
Document Number: 89012
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common-Cathode Schottky Rectifier
FEATURES
? Guardring for overvoltage protection
? Lower power losses,
high efficiency
? Low forward voltage drop
? High forward surge capability
? High frequency operation
? Solder dip 275 °C max., 10 s, per JESD 22-B106
? Material categorization: For
definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94V-0 flammability rating?
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102?
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
40 V
EAS
20 mJ
IFSM
280 A
VF
at I
F
= 15 A
0.413 V
TJ max. 150 °C
TO-220AB
CASE
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL M30L40C UNIT
Maximum repetitive peak reverse voltage
VRRM
40 V
Maximum average forward rectified current (Fig.1)
total device
I
per diode 15F(AV)
30
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on
rated load per diode
IFSM
280 A
Peak repetitive reverse current per diode at tp
= 2 μs, 1 kHz
IRRM
1.0 A
Non-repetitve avalanche energy at 25 °C, IAS
= 2 A, L = 10 mH per diode
EAS
20 mJ
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150 °C
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